SIGC25T60SNCX1SA1

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:f67e1f69a8d1 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：44ns/324ns
Test Condition：400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC25T60SNCX1SA1

Overview

The SIGC25T60SNC is a 600 V NPT technology IGBT chip with a 100 µm thickness and die size of 4.5 x 5.71 mm². It supports a DC collector current of 30 A and a pulsed current of 90 A. The saturation voltage is typically 1.6 V at 30 A, while the gate threshold voltage ranges from 3 V to 5 V. Switching characteristics include a turn-on delay of 44 ns and a turn-off delay of 324 ns under specified inductive load conditions.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance.
Features a positive temperature coefficient to facilitate easy paralleling.
Short circuit proof capability ensures operational reliability.

Applications

Motor drives
Power conversion systems

Procurement Notes

Verify the specific ordering code required for your assembly process. Infineon offers two variants: Q67041-A4667-A001 for chips sawn on foil and Q67041-A4667-A002 for unsawn chips. Confirm that the selected variant aligns with your wire bonding and die attachment specifications before finalizing procurement.

Selection Notes

Select this component based on its 600 V rating and 30 A continuous current capacity. Ensure the application environment accommodates the -55 °C to +150 °C operating junction temperature range. Consider the switching speed requirements, as the device exhibits specific dynamic characteristics under inductive loads that differ from standard IGBT configurations.

Part Context

This IGBT chip serves as the core semiconductor element within discrete modules like the SGP30N60. Manufactured using 150 mm wafers, it features photoimide passivation and aluminum-silicon emitter metallization. The chip is designed for epoxy or soft solder die bonding and utilizes aluminum wire bonds up to 500 µm.