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The SIGC28T60E is a bare die IGBT utilizing TRENCHSTOP™ IGBT3 technology with a 600V collector-emitter voltage rating. It features a die size of 6.57mm x 4.20mm and operates within a junction temperature range of -40°C to +175°C. The device exhibits a maximum saturation voltage of 1.85V at 50A and supports pulsed currents up to 150A. Key electrical characteristics include an input capacitance of 3140pF and a short-circuit withstand time of 6µs. The chip employs a sawn-on-foil format with specific pad dimensions for integration into power modules.
Verify the exact ordering suffix against Infineon documentation, as variations may exist. Confirm that the component is supplied as a bare die on foil rather than a packaged module. Ensure storage conditions comply with IEC standards for moisture-sensitive devices if the original sealed barrier bag has been opened. Validate compatibility with intended assembly processes before procurement.
Select this component for designs requiring 600V blocking capability with optimized conduction losses. Consider the 6.57mm x 4.20mm die size for thermal management calculations. Ensure the gate drive circuit accommodates the specified input capacitance. Verify that the application does not require automotive qualification, as this product lacks AEC-Q100 certification.
This part represents a semiconductor chip intended for integration into larger power modules or discrete assemblies by system manufacturers. It serves as a core switching element within Infineon's TRENCHSTOP™ portfolio, focusing on efficiency and reliability for industrial frequency converters and motor control systems.
Direct replacements must match the 600V rating, similar die dimensions, and TRENCHSTOP™ IGBT3 architecture. Verify that alternative chips possess compatible pad layouts and electrical parameters such as VCEsat and switching times to ensure seamless integration without redesigning the module substrate or driver circuitry.
No, the SIGC28T60E is not qualified according to AEC-Q100 or AEC-Q101 standards and is intended for industrial use only.
The device can withstand a short circuit for 6 microseconds under specified conditions of VGE=15V, VCC=360V, and Tvj=150°C.
It is strongly recommended not to consume the Ni layer completely during the production process to achieve a reliable solder connection.