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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：1.77V @ 15V, 50A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC28T65E is a bare die IGBT utilizing TRENCHSTOPTM IGBT3 technology with a 650V collector-emitter voltage rating. It features a die size of 6.57 x 4.20 mm and an emitter pad area of 27.59 mm². The device supports a DC collector current of 50A at 25°C, with a maximum pulsed current of 150A. Key electrical parameters include a VCEsat of 1.45V (typical) at 50A and 15V gate drive, and a short-circuit withstand time of 6µs at 150°C junction temperature. The package format is sawn on foil.
Feature Summary
- Utilizes TRENCHSTOPTM IGBT3 trench and field stop technology for optimized performance.
- Features low saturation voltage and short tail current characteristics to reduce turn-off losses.
- Exhibits a positive temperature coefficient to facilitate easy paralleling in high-power applications.
Applications
- Power module integration
- Industrial motor drives
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm exact material content and packaging specifications. Ensure that storage conditions comply with IEC 62258-3 standards for moisture sensitivity management. Confirm that the intended application environment does not require automotive qualification, as this component lacks AEC-Q100 or AEC-Q101 certification.
Selection Notes
Select this component for designs requiring a 650V IGBT chip with robust short-circuit capability. Evaluate thermal management requirements carefully, as switching characteristics depend heavily on the final module design and mounting technology. Ensure the assembly process accommodates the specified wire bond and die bond materials for reliable connection.
Part Context
This component belongs to Infineon's industrial power control portfolio, specifically designed as a bare die for integration into custom power modules. It represents the TRENCHSTOPTM IGBT3 generation, focusing on efficiency and reliability for demanding industrial environments rather than standalone discrete packages.
Replacement Considerations
Direct replacement requires matching the 650V rating, die dimensions, and electrical characteristics. Verify compatibility with existing module assembly processes, particularly regarding soldering temperatures and wire bonding capabilities. Consult Infineon for updated generations or alternative chips within the same technology family.
