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Product Detailed Parameters
- Description：IGBT NPT 600V 50A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 50A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：43ns/130ns
- Test Condition：300V, 50A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC42T60NC is a standalone IGBT chip utilizing NPT technology, designed for integration into power modules. It features a 600V collector-emitter voltage rating and supports a DC collector current of 50A at 25°C. The device has a die size of 6.5 x 6.5 mm² with a thickness of 100µm. Key electrical parameters include a saturation voltage of 1.7V to 2.5V at 50A and a threshold voltage of 4.5V to 6.5V. Switching characteristics at 125°C show turn-on delay of 43ns and turn-off delay of 130ns under specified inductive load conditions.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust performance
- Exhibits positive temperature coefficient for safe paralleling
- Features emitter and gate pads suitable for epoxy or soft solder die bonding
Applications
- Industrial motor drives
- Power module assembly
- High-voltage switching circuits
Procurement Notes
Verify the specific ordering code Q67041-A4692-A001 against procurement requirements. Confirm that the component is handled as an Electrostatic Discharge Sensitive Device per MIL-STD 883. Ensure storage conditions adhere to the recommendation of dry nitrogen and ambient temperatures below 23°C to maintain integrity before assembly.
Selection Notes
Select this chip for applications requiring 600V isolation and moderate current handling up to 50A. The NPT technology provides a positive temperature coefficient, facilitating easy paralleling of multiple chips within a single module. Consider the 100µm thickness and metallization systems when designing die-bonding processes compatible with epoxy or soft solder materials.
Part Context
This component is a discrete IGBT chip manufactured by Infineon Technologies, intended for internal use within larger power electronic assemblies rather than direct circuit mounting. It serves as the core switching element in modules like the FS 50 R06 YL4. The chip is processed on a 150mm wafer and undergoes visual inspection according to AQL 0.65 standards.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must verify pinout compatibility, thermal resistance, and electrical ratings when considering alternative IGBT chips from other manufacturers or different Infineon series.
