SIGC42T60NCX1SA5

Description：IGBT NPT 600V 50A DIE
Series：-

SKU:965cd74b9c33 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：43ns/130ns
Test Condition：300V, 50A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC42T60NCX1SA5

Overview

The SIGC42T60NC is a 600 V NPT-technology IGBT chip designed for integration into discrete modules. It features a 100 µm die size with a 6.5 x 6.5 mm² raster and supports a DC collector current of 50 A at 25 °C, peaking at 150 A pulsed. The device exhibits a positive temperature coefficient for easy paralleling. Key electrical parameters include a saturation voltage of 1.7 V to 2.5 V at 50 A, a threshold voltage of 4.5 V to 6.5 V, and switching times of 43 ns turn-on delay and 130 ns turn-off delay under specified inductive load conditions.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features a positive temperature coefficient facilitating parallel operation
Designed specifically for use within IGBT module assemblies

Applications

Industrial motor drives
Power conversion systems
Inverter modules

Procurement Notes

Verify the specific ordering code Q67041-A4692-A001 against your Bill of Materials. Confirm that the component is received as a bare sawn-on-foil chip rather than a packaged device. Ensure storage conditions remain within dry nitrogen below 23°C to maintain integrity before assembly.

Selection Notes

Select this chip when designing custom IGBT modules requiring 600 V blocking capability and 50 A continuous current handling. The NPT architecture provides reliable operation across the -55 °C to +150 °C junction temperature range. Consider the 100 µm thickness and metallization compatibility for epoxy or soft solder die bonding processes.

Part Context

This component is an internal semiconductor die intended for module manufacturers rather than end-users. It serves as the core switching element within larger power electronic assemblies. The datasheet references the FS 50 R06 YL4 device data sheet for further context on module-level characteristics derived from this chip.

Replacement Considerations

No direct public substitute part numbers are documented for this specific bare die configuration. Module designers must evaluate alternative chips based on matching voltage ratings, current capabilities, and physical dimensions such as the 6.5 x 6.5 mm² die size.