SIGC42T60SNCX1SA2

Description：IGBT NPT 600V 50A DIE
Series：-

SKU:43d750976243 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：57ns/380ns
Test Condition：400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC42T60SNCX1SA2

Overview

The SIGC42T60SNC is a 600V NPT technology IGBT chip designed for integration into power modules. It features a 100µm die size with dimensions of 6.5 x 6.5 mm² and an active area of 35.6 mm². The component supports a DC collector current of 50A and a pulsed current of 150A, operating within a junction temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 1.7V at 50A and a gate-emitter threshold voltage of 3V to 5V.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features a positive temperature coefficient for safe parallel operation
Includes passivation on the front side using photoimide
Collector metallization is compatible with epoxy and soft solder die bonding

Applications

Industrial motor drives
Power module assembly
High-voltage switching circuits

Procurement Notes

Verify that the specific ordering code matches the required configuration, as the datasheet distinguishes between sawn-on-foil and unsawn variants. Confirm compatibility with existing thermal management systems given the maximum junction temperature limit. Ensure handling procedures account for the device being an electrostatic discharge sensitive component requiring appropriate storage conditions.

Selection Notes

Select this chip when designing modules requiring 600V blocking capability with high current density. The NPT architecture offers advantages in short-circuit ruggedness compared to punch-through designs. Consider the specific metallization requirements for die bonding, as the nickel-silver system supports both epoxy and soft solder processes. Evaluate thermal resistance constraints based on the intended application environment.

Part Context

This component belongs to Infineon's discrete IGBT chip portfolio, specifically engineered for use within larger power semiconductor assemblies rather than standalone circuit applications. It represents a specialized building block for manufacturers creating custom or standard IGBT modules for industrial and automotive power electronics markets.

Replacement Considerations

Direct replacements are limited due to the proprietary nature of bare dies. Equivalent functionality may be found in other 600V NPT chips from various manufacturers, but pinout and mechanical dimensions will differ significantly. Module-level substitutes should be considered if the original module design is obsolete.

FAQ

What is the difference between the sawn-on-foil and unsawn versions?

The datasheet lists two ordering codes: one for chips sawn on foil and another for unsawn chips. The electrical characteristics remain identical, but the mechanical handling and preparation for die-bonding differ.

Is this chip suitable for life-support systems?

No. Infineon explicitly states that components may only be used in life-support devices or systems with express written approval, as failure could endanger human life.