SIGC42T60UNX1SA2

Description：IGBT NPT 600V 50A DIE
Series：-

SKU:c301432bcc33 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：48ns/350ns
Test Condition：400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC42T60UNX1SA2

Overview

The SIGC42T60UN is a high-speed IGBT chip utilizing NPT technology with a 600V collector-emitter voltage rating. It features a 100µm die size and supports a DC collector current of 50A at Tj=25°C, with a pulsed current capability of 150A. The device exhibits a typical VCE(sat) of 3.15V at 50A and includes short-circuit proof characteristics. Key dynamic parameters include a turn-off delay time (td(off)) of 350ns and a fall time (tf) of 20ns under specified inductive load conditions.

Feature Summary

NPT technology for positive temperature coefficient enabling easy paralleling
Short-circuit proof design for robust operation
High-speed switching capabilities

Applications

Welding equipment
Power Factor Correction (PFC)
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering code SP0001-01820 against official Infineon documentation to ensure correct part identification. Confirm that the component meets the required AQL 0.65 visual inspection standards and electrostatic discharge sensitivity classifications prior to integration into manufacturing processes.

Selection Notes

Select this chip when designing circuits requiring 600V blocking capability with a 50A continuous current rating. Ensure the application environment accommodates the -55°C to +150°C operating junction temperature range. Consider the 100µm thickness and sawn-on-foil format for appropriate die bonding and wire bonding compatibility during assembly.

Part Context

This component serves as the internal semiconductor die for the SGW50N60HS discrete module housed in a TO247 package. It represents Infineon's NPT-based IGBT technology optimized for high-speed switching applications. The datasheet provides detailed electrical and mechanical specifications for the bare chip rather than the packaged module.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for potential alternatives or updated product line replacements.