SIGC61T60NCX7SA1

SIGC61T60NCX7SA1

  • Description:IGBT NPT 600V 75A DIE
  • Series:-

SKU:f563f6f5f35e Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 75A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):75 A
  • Current - Collector Pulsed (Icm):225 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 75A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:65ns/170ns
  • Test Condition:300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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SIGC61T60NCX7SA1

Overview

The SIGC61T60NCX7SA1 is a single NPT IGBT from Infineon Technologies, utilizing TRENCHSTOP™ technology. It features a collector-emitter breakdown voltage of 600 V and a maximum collector current of 75 A. The component is supplied in a surface mount die configuration on a wafer substrate. This device is designed for high-efficiency power switching applications requiring robust performance.

Feature Summary

  • Utilizes Infineon's TRENCHSTOP™ IGBT3 chip technology for optimized switching characteristics
  • NPT (Non-Punch-Through) structure ensures stable thermal performance and ruggedness
  • Surface mount die format facilitates integration into advanced packaging solutions

Applications

  • High-power industrial motor drives
  • Medium-voltage AC/DC power conversion systems
  • Inverter modules for renewable energy applications

Procurement Notes

Verify the specific revision status and wafer lot details when sourcing this component. Confirm that the surface mount die format aligns with your assembly capabilities. Ensure compliance with RoHS directives as indicated in official documentation. Cross-reference part numbers carefully to avoid confusion with similar variants.

Selection Notes

Select this IGBT for applications requiring 600 V blocking capability and up to 75 A continuous current. Consider the thermal management requirements associated with the surface mount die package. Evaluate the switching speed and losses against system efficiency targets. Ensure gate drive compatibility with the TRENCHSTOP™ technology specifications.

Part Context

This component belongs to Infineon's TRENCHSTOP™ IGBT3 product family, known for high reliability and efficiency. It represents a discrete power semiconductor solution designed for demanding industrial environments. The wafer-based supply format distinguishes it from standard packaged modules, offering flexibility for custom assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Verify functional equivalence with other 600 V NPT IGBTs if direct substitution is required. Consult Infineon technical support for approved alternatives.

SIGC61T60NCX7SA1SIGC61T60NCX7SA1

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