SIGC76T65R3EX1SA1

Description：IGBT TRENCH FS 650V 150A DIE
Series：TrenchStop™

SKU:5931460aeb86 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 150A DIE
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：450 A
Vce(on) (Max) @ Vge, Ic：1.2V @ 15V, 45A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC76T65R3EX1SA1

Overview

The SIGC76T65R3E is a bare die IGBT utilizing TRENCHSTOP™ IGBT3 technology with a 650V collector-emitter voltage rating. It features a 150A nominal current and a 7.87mm x 9.69mm die size. The component operates within a junction temperature range of -40°C to +150°C, with a maximum operating limit of 175°C. Key electrical characteristics include a typical VCEsat of 1.45V at 150A and 25°C, and an integrated gate resistor. Designed for industrial power control, it supports short circuit withstand times up to 6µs.

Feature Summary

Utilizes trench and field stop technology for low saturation voltage and reduced turn-off losses.
Features a positive temperature coefficient to facilitate easy paralleling in high-power module designs.
Includes an integrated gate resistor to simplify driver interface requirements.

Applications

Industrial drives
Power modules

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and handling specifications. As a bare die product, ensure compliance with electrostatic discharge sensitivity standards during storage and assembly. Confirm that the intended application environment meets the specified thermal and voltage ratings before procurement.

Selection Notes

Select this component for applications requiring robust 650V switching capabilities with simplified parallel operation. Evaluate the mechanical parameters, including the 70µm silicon thickness and pad dimensions, to ensure compatibility with the target module's die bonding and wire bonding processes. Verify that the system design accommodates the specified short circuit duration limits.

Part Context

This component belongs to the TRENCHSTOP™ IGBT3 family, representing Infineon's third-generation trench technology. It is designed as a bare die for integration into larger power modules rather than standalone discrete use. The product line focuses on optimizing power density and reliability for industrial power control applications.

Replacement Considerations

Direct replacements must match the 650V rating, 150A nominal current, and identical die dimensions (7.87mm x 9.69mm). Verify compatibility with existing module assembly processes, specifically regarding the emitter and gate pad layouts and the integrated gate resistor value.