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Product Detailed Parameters
- Description：IGBT NPT 600V 100A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 100A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：95ns/200ns
- Test Condition：300V, 100A, 2.2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC81T60NCX1SA5 is a silicon IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. Designed for integration into power modules, it features a 600V collector-emitter voltage rating and a die size of 8.99 x 8.99 mm². The component supports a pulsed collector current of 300A and operates within a junction temperature range of -55°C to +150°C. It exhibits a positive temperature coefficient and is short-circuit proof.
Feature Summary
- Utilizes NPT technology for robust performance
- Features a positive temperature coefficient for easy paralleling
- Short-circuit proof design capability
Applications
- Industrial motor drives
- Power module assembly
Procurement Notes
Verify the specific ordering code Q67041-A4694-A001 against the datasheet to ensure correct part identification. Confirm that the X1SA5 suffix aligns with your required packaging or traceability specifications. Check storage requirements, which mandate dry nitrogen storage at 23°C for less than six months in original containers. Ensure handling procedures account for electrostatic discharge sensitivity as per MIL-STD 883.
Selection Notes
Select this component when designing high-power IGBT modules requiring 600V blocking capability. The 100µm thickness and 8.99mm square die size are critical for thermal management calculations. Consider the 300A pulsed current rating for transient load conditions. The positive temperature coefficient simplifies parallel operation strategies without complex current balancing circuits.
Part Context
This component belongs to Infineon's discrete IGBT chip portfolio intended for internal module manufacturing rather than direct end-user circuit mounting. It serves as a fundamental semiconductor die for constructing intelligent power modules. The NPT technology provides a balance between low conduction losses and high reliability under varying thermal conditions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. As a raw semiconductor die, replacement requires matching the exact die dimensions, voltage ratings, and metallization specifications to maintain module integrity.
