SIGC81T60SNCX1SA1

Description：IGBT NPT 600V 100A DIE
Series：-

SKU:7e6252832ca6 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 100A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 100A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：65ns/450ns
Test Condition：400V, 100A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC81T60SNCX1SA1

Overview

The Infineon SIGC81T60SNC is a bare IGBT chip utilizing Non-Punch-Through (NPT) technology, designed for integration into power modules. It features a 600 V collector-emitter voltage rating and supports a DC collector current of 100 A at an operating junction temperature up to 150 °C. The die measures 8.99 x 8.99 mm² with a thickness of 100 µm. Key electrical parameters include a maximum saturation voltage of 2.5 V at 100 A and a gate-emitter threshold voltage ranging from 3 V to 5 V.

Feature Summary

Positive temperature coefficient facilitates easy paralleling in module designs
Short-circuit proof capability enhances robustness under fault conditions
NPT technology provides stable switching performance

Applications

Industrial motor drives
Power module assembly
Inverter systems

Procurement Notes

Verify the specific ordering code Q67050-A4164-A003 against your Bill of Materials. Confirm that the component is received as a bare sawn-on-foil chip rather than a packaged device. Ensure storage conditions strictly follow the requirement for dry nitrogen environments below 6 months at 23°C to maintain material integrity.

Selection Notes

Select this component when designing high-power modules requiring NPT technology for improved short-circuit withstand capability. The positive temperature coefficient is critical for applications demanding reliable parallel operation of multiple chips within a single package structure.

Part Context

This part represents a semiconductor die intended for internal use by module manufacturers or specialized integrators. It serves as the core switching element within larger assemblies, distinct from discrete packaged transistors available for direct circuit board mounting.