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Product Detailed Parameters
- Description：IGBT NPT 600V 100A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 100A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：65ns/450ns
- Test Condition：400V, 100A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC81T60SNCX7SA1 is a Silicon Carbide Schottky diode from Infineon Technologies, belonging to the CoolSiC™ product family. It features a 600 V reverse voltage rating and is housed in an SMD/SMT package suitable for surface mount applications. The component utilizes advanced SiC technology to provide high thermal stability and low forward voltage drop characteristics essential for efficient power conversion.
Feature Summary
- Utilizes silicon carbide (SiC) semiconductor technology for superior performance compared to traditional silicon devices.
- Features a Schottky barrier structure that eliminates reverse recovery charge, reducing switching losses.
- Designed with robust thermal management capabilities to withstand high operating temperatures.
Applications
- High-frequency DC-DC converters
- Uninterruptible power supplies (UPS)
- Solar micro-inverters
Procurement Notes
Verify the specific suffix 'CX7SA1' against official Infineon documentation to confirm exact packaging configuration and tape-and-reel specifications. Ensure compatibility with required RoHS directives and material content declarations prior to procurement. Cross-reference the full part number with current datasheets to validate availability and manufacturing status.
Selection Notes
Select this component for designs requiring high efficiency at elevated frequencies where silicon diode reverse recovery losses are prohibitive. Evaluate thermal resistance parameters relative to the intended heatsinking strategy. Confirm that the 600 V rating provides adequate margin for the maximum circuit voltage including transients.
Part Context
This device is part of Infineon's CoolSiC™ portfolio, which focuses on wide-bandgap semiconductors for power electronics. The series targets applications demanding higher energy density and improved system efficiency. It complements other SiC components like MOSFETs in complete power stage solutions.
Replacement Considerations
Consult official Infineon substitution guides for direct equivalents. Verify pinout compatibility and thermal footprint if replacing legacy silicon Schottky diodes or older SiC generations. Ensure electrical ratings meet or exceed original design requirements.
