SIHB150N60E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHB150N60E-GE3 is a single N-channel Power MOSFET from the E Series, utilizing fourth-generation technology. It features a D2PAK (TO-263) surface-mount package with a drain-source voltage rating of 600 V and a continuous drain current of 22 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.158 Ω at VGS = 10 V and a total gate charge of up to 36 nC. Thermal performance includes a junction-to-case thermal resistance of 0.7 °C/W and a maximum power dissipation of 179 W. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology designed for low figure-of-merit Ron x Qg
• Rated for unclamped inductive switching (UIS) avalanche energy
• Optimized for reduced switching and conduction losses through low effective capacitance

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge (HID) lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm RoHS compliance status via the provided documentation link. Ensure ordering suffixes match the required lead-free and halogen-free configuration. Validate that the specific batch meets the environmental categorization requirements defined by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and efficient switching are required in compact surface-mount designs. The low gate charge supports higher frequency operation, while the robust avalanche rating provides resilience against inductive load transients. Evaluate thermal management needs based on the specified junction-to-case resistance and derating curves for continuous applications.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series, which focuses on optimizing the trade-off between conduction and switching losses. The D2PAK package offers a balance between thermal dissipation capabilities and PCB space efficiency compared to larger through-hole alternatives. It serves as a direct replacement for legacy devices requiring similar voltage ratings and mounting styles.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Vishay E Series parts like SIHW23N60E-GE3 for through-hole variants or SIHF080N60E-GE3 for lower resistance options. Verify pinout compatibility and thermal pad dimensions when substituting packages. Ensure the substitute device meets the same UIS rating and voltage breakdown requirements.