SIHB17N80AE-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHB17N80AE-GE3 is a single N-channel power MOSFET utilizing TrenchFET technology, housed in a D2PAK (TO-263) surface-mount package. It features an 800 V drain-source voltage rating and a continuous drain current of 15 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.250 Ω at VGS = 10 V and ID = 8.5 A. Key dynamic parameters include a maximum total gate charge of 62 nC, a turn-on delay time of up to 42 ns, and a fall time of up to 62 ns. Maximum power dissipation reaches 179 W, with an operating junction temperature range spanning from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Incorporates TrenchFET technology to achieve a low figure-of-merit product of on-resistance and gate charge, reducing both switching and conduction losses.
• Features avalanche energy rated capability for unclamped inductive switching applications, ensuring robustness against transient overvoltage events.
• Designed with reduced effective capacitance to optimize performance in high-frequency switching environments.

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge (HID) lighting systems
• Industrial motor drives and battery chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components. The standard lead-free variant is designated as SIHB17N80AE-GE3. Tape and reel packaging options are available under distinct part numbers such as SIHB17N80AE-T1-GE3 or SIHB17N80AE-T5-GE3. Confirm that the received component matches the required package style and tape configuration before integration into production lines.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage blocking capabilities combined with efficient thermal management in surface-mount layouts. The TO-263 package facilitates direct mounting to heatsinks via the exposed drain pad. Ensure gate drive voltages remain within the specified ±30 V limit to prevent dielectric breakdown while maintaining optimal threshold control for low-loss operation.

Single FETs, MOSFETs Part Context

This device belongs to the E Series Power MOSFET lineup from Vishay Siliconix. It represents a silicon-based enhancement-mode transistor optimized for general-purpose high-voltage switching. The series emphasizes efficiency improvements through advanced trench gate architecture, targeting modern power conversion standards where size and thermal performance are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same family include SIHB17N80AE-T1-GE3 and SIHB17N80AE-T5-GE3, which differ primarily in bulk tape-and-reel packaging formats rather than electrical characteristics.

Single FETs, MOSFETs FAQ

Is the SIHB17N80AE-GE3 rated for unclamped inductive switching?

Yes, the datasheet specifies that the device is avalanche energy rated, allowing it to withstand single-pulse avalanche energy events up to 127 mJ under defined test conditions.

What is the maximum reverse recovery charge of the body diode?

The maximum reverse recovery charge (Qrr) is specified as 48 μC, measured at a junction temperature of 25 °C with a forward current of 8.5 A and a di/dt of 100 A/μs.