SIHD6N62E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHD6N62E-GE3 is a single N-channel power MOSFET housed in a DPAK (TO-252) package. It features a drain-source voltage rating of 620 V and a continuous drain current of 6 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.9 Ω at VGS = 10 V and a total gate charge of up to 34 nC. Thermal performance includes a junction-to-case resistance of 1.6 °C/W and a maximum power dissipation of 78 W. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Avalanche energy rated for unclamped inductive switching applications
• Optimized figure-of-merit combining low on-resistance and gate charge
• Ultra-low gate charge design reduces input capacitance
• Minimizes both switching and conduction losses

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge lighting
• Industrial welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs, as product specifications are subject to change without notice. Confirm that the lead-free and halogen-free material categorization meets all regulatory requirements for the intended deployment environment. Ensure thermal management strategies align with the specified linear derating factors and maximum junction temperature limits.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability near 620 V is required alongside moderate current handling. The DPAK package suits surface-mount layouts where space efficiency is prioritized over the higher thermal capacity of through-hole options. Evaluate the 0.9 Ω on-resistance against system conduction loss budgets and ensure gate drive voltages can reliably achieve the specified 10 V threshold for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup, which focuses on optimizing the trade-off between conduction and switching losses. The series utilizes silicon technology to deliver robust performance in high-voltage switching environments. The GE3 suffix indicates compliance with lead-free and halogen-free manufacturing standards.

Single FETs, MOSFETs Replacement Considerations

Cross-reference pinout compatibility and thermal resistance values when substituting. Verify that alternative devices meet or exceed the 620 V breakdown voltage and 6 A continuous current ratings. Ensure the replacement package matches the DPAK footprint dimensions to maintain board layout integrity.