SIHG73N60E-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHG73N60E-E3 is a single N-channel enhancement mode power MOSFET from the E Series, housed in a TO-247AC package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 73 A at 25 °C case temperature. The device has a maximum on-state resistance of 0.039 Ω at VGS = 10 V and a total gate charge up to 362 nC. It supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 520 W.

Single FETs, MOSFETs Feature Summary

• Avalanche energy rated for unclamped inductive switching (UIS) applications
• Optimized figure-of-merit combining low on-resistance and low gate charge
• Designed to reduce both switching and conduction losses
• Features ultra-low input capacitance for high-speed operation

Single FETs, MOSFETs Applications

• Switch mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• High-intensity discharge (HID) lighting systems
• Industrial motor drives and welding equipment
• Solar photovoltaic inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components. The '-E3' designation indicates lead-free construction compliant with RoHS standards. Confirm that the '-GE3' variant is selected if halogen-free material categorization is required by project specifications. Ensure the TO-247AC package dimensions match the target thermal management design.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability and efficient thermal performance. The TO-247AC package facilitates effective heat dissipation through the drain tab. Evaluate the 0.039 Ω maximum on-state resistance against system efficiency targets. Consider the 73 A continuous current rating relative to the expected load profile and ambient cooling conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup, which focuses on optimizing the trade-off between conduction and switching losses. The series utilizes advanced silicon technology to achieve low figures-of-merit. The TO-247AC package provides a standardized footprint for high-power through-hole mounting solutions.

Single FETs, MOSFETs Replacement Considerations

The SiHG73N60E-GE3 serves as a direct functional substitute, differing only in its halogen-free material compliance status. Both variants share identical electrical characteristics and pin configurations within the E Series architecture.