SIHP11N80AE-GE3

Single FETs, MOSFETs Overview

The SiHP11N80AE-GE3 is a Vishay Siliconix N-channel power MOSFET in the E Series, housed in a TO-220AB package. It features an 800 V drain-source voltage rating and a maximum continuous drain current of 8 A at 25 °C case temperature. The device exhibits a typical on-state resistance (RDS(on)) of 0.391 Ω at VGS = 10 V and ID = 5.5 A. Key electrical parameters include a maximum total gate charge (Qg) of 42 nC, a gate-source threshold voltage (VGS(th)) of 4 V, and a maximum power dissipation of 78 W. It supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Features ultra-low gate charge and low effective input capacitance for reduced switching losses.
• Rated for unclamped inductive switching (UIS) avalanche energy applications.
• Includes integrated Zener diode for electrostatic discharge (ESD) protection.

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• High-intensity discharge lighting

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix against official documentation to confirm compliance with lead-free and halogen-free material requirements. Ensure that thermal management designs account for the specified linear derating factor and maximum junction-to-case thermal resistance ratings under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and low conduction losses are required. The specific TO-220AB through-hole package dictates mechanical mounting constraints. Evaluate the trade-off between the 0.391 Ω RDS(on) and the 42 nC gate charge to optimize efficiency for the target switching frequency and load current profile.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix E Series Power MOSFETs, which utilize advanced silicon technology to achieve a low figure-of-merit product of Ron multiplied by Qg. This series is engineered specifically for high-efficiency power conversion applications requiring robust performance in standard through-hole packages.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Vishay E Series devices such as SIHA11N80AE-GE3 or SIHG11N80AE-GE3 if different package footprints like TO-220FP or TO-247 are required while maintaining similar electrical characteristics.

Single FETs, MOSFETs FAQ

Is the SiHP11N80AE-GE3 rated for avalanche operation?

Yes, the datasheet specifies that the device is avalanche energy rated (UIS), with a single pulse avalanche energy limit of 88 mJ under defined test conditions.

What is the maximum power dissipation of this MOSFET?

The maximum power dissipation is 78 W when measured at a case temperature of 25 °C.