SIJ186DP-T1-GE3

$0.88

Description：MOSFET N-CH 60V 23A/79.4A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4e0885b7fedf Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIJ186DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 23A/79.4A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIJ186DP-T1-GE3

Description：MOSFET N-CH 60V 23A/79.4A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1710 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 57W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIJ186DP-T1-GE3

SIJ186DP-T1-GE3

Single FETs, MOSFETs Overview

The SIJ186DP-T1-GE3 is a Vishay Siliconix N-channel 60 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a PowerPAK SO-8L single package with a maximum drain-source on-state resistance of 4.5 mΩ at VGS = 10 V and 79.4 A continuous drain current. The device includes optimized low RDS(on)-Qg figure-of-merit, tuned for the lowest RDS(on)-Qoss figure-of-merit, and undergoes 100% Rg and UIS testing.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET architecture
Optimized low RDS(on)-Qg figure-of-merit
Tuned for lowest RDS(on)-Qoss figure-of-merit
100% Rg and UIS tested

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switch
DC/DC converter
Motor drive switch

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm compliance status through RoHS and REACH declarations provided in the datasheet. Validate package details to ensure compatibility with the specified PowerPAK SO-8L footprint. Review absolute maximum ratings and thermal resistance parameters before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and low conduction losses. The optimized figures-of-merit support improved switching performance. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on). Consider thermal management strategies based on junction-to-case and junction-to-ambient resistance values under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the SiJ series of N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8L leadless package designed for surface mount applications. The device represents an advancement in silicon technology aimed at reducing power dissipation and improving overall system efficiency in compact form factors.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence with other MOSFETs without validating pinout, voltage ratings, and thermal characteristics against the original specifications.