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The SIL2300A-TP is a dual N-channel MOSFET array manufactured by Micro Commercial Components (MCC). It utilizes trench LV technology and is housed in an SOT-23-6L package. The device features a drain-source voltage of 20V, a continuous drain current of 4.4A at 100°C, and a maximum power dissipation of 1.4W. Key electrical parameters include a drain-source on-resistance of 18mΩ at VGS=4.5V and ID=5A, and a gate threshold voltage ranging from 0.45V to 1.0V. The component supports an operating junction temperature range of -55°C to +150°C.
Verify the authenticity of the SIL2300A-TP by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit components pose significant risks; ensure traceability and compliance with MCC quality standards. Confirm that the ordering suffix indicates RoHS compliance and tape-and-reel packaging containing 3,000 pieces per reel before finalizing acquisition.
Select the SIL2300A-TP when a dual N-channel solution is required in an SOT-23-6L footprint. Ensure the application operates within the 20V drain-source voltage limit and 1.4W total power dissipation constraints. Consider the thermal resistance of 90°C/W for heat management. Verify that the gate threshold voltage characteristics align with the driving logic levels of the control circuitry.
The SIL2300A belongs to the SIL2300A series of dual MOSFET arrays produced by Micro Commercial Components. It is designed as a complementary alternative to discrete single-channel solutions, offering integrated functionality in a small outline transistor package. The device is part of MCC's broader portfolio of silicon-based power transistors optimized for surface mount applications.
Public confirmed substitute part numbers are not available in the provided documentation.
The maximum continuous drain current is 4.4A at a case temperature of 100°C.
Yes, the datasheet specifies static characteristics for the continuous body diode current and diode forward voltage, indicating the presence of intrinsic body diodes.
The thermal resistance (RθJA) is 90°C/W, measured with the device mounted on a 1in² FR-4 board with 2oz copper in a still air environment.