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SIR5112DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 100 V (D-S) MOSFET POW. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIR5112DP-T1-RE3
- Description：N-CHANNEL 100 V (D-S) MOSFET POW
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：12.6A (Ta), 42.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
- Rds On (Max) @ Id, Vgs：14.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：790 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：5W (Ta), 56.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SIR5112DP-T1-RE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SiR5112DP is a single N-Channel MOSFET utilizing TrenchFET Gen V technology, housed in a leadless PowerPAK SO-8 package. It features a 100 V drain-source voltage rating and a maximum on-resistance of 14.9 mΩ at VGS = 10 V. The device supports a continuous drain current of 42.6 A at TC = 25 °C and offers optimized switching performance with a typical total gate charge of 8 nC at VGS = 7.5 V.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen V power MOSFET architecture
- Optimized for low RDS(on) x Qg figure-of-merit
- Tuned for lowest RDS(on) x Qoss figure-of-merit
- 100% tested for gate resistance and unclamped inductive switching
Single FETs, MOSFETs Applications
- Synchronous rectification
- Primary side switch
- DC/DC converters
- Power supplies
- Motor drive control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm the tape and reel packaging format. Ensure compliance requirements match project specifications by checking RoHS and REACH documentation. Confirm that the lead-free and halogen-free status aligns with environmental standards. Validate thermal management designs against junction-to-case resistance limits.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high efficiency in compact footprints. The low gate charge facilitates faster switching speeds. Evaluate thermal dissipation capabilities based on the specific ambient temperature conditions. Consider the body diode reverse recovery characteristics for synchronous rectifier topologies.
Single FETs, MOSFETs Part Context
This part belongs to the SiR series of N-Channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8 surface-mount package designed for efficient heat dissipation. The device represents an evolution in trench gate technology aimed at reducing conduction and switching losses in modern power electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for direct cross-reference data. Verify pinout compatibility and package dimensions before substitution. Ensure replacement parts meet or exceed the original voltage, current, and thermal ratings.
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