ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
SIR572DP-T1-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 150 V (D-S) MOSFET 150. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIR572DP-T1-BE3
- Description：N-CHANNEL 150 V (D-S) MOSFET 150
- Series：TrenchFET® Gen V
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：14.8A (Ta), 59.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
- Rds On (Max) @ Id, Vgs：10.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2733 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：5.7W (Ta), 92.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SIR572DP-T1-BE3
Single FETs, MOSFETs Overview
The SIR572DP-T1-BE3 is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen V technology. It features a 150 V drain-source voltage rating and a maximum on-resistance of 0.0108 Ω at VGS = 10 V. The device supports a continuous drain current of 59.7 A and includes 100% Rg and UIS testing. Packaged in a leadless PowerPAK SO-8, it offers optimized low RDS(on) x Qg figure-of-merit.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen V power MOSFET architecture
- Optimized for lowest RDS(on) x Qoss figure-of-merit
- 100% tested for gate resistance and unclamped inductive switching
Single FETs, MOSFETs Applications
- Synchronous rectification
- Primary side switch
- DC/DC converters
- Power supplies
- Motor drive control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix BE3 to confirm the alternate manufacturing location designation. Ensure compatibility with the leadless PowerPAK SO-8 package requirements, noting that manual soldering with an iron is not recommended. Confirm compliance documentation and material categorization definitions via official Vishay resources before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for high-current applications requiring a 150 V breakdown voltage. Evaluate thermal management needs based on the junction-to-case thermal resistance of 1.35 °C/W maximum. Consider the gate charge characteristics for switching speed requirements in DC/DC converter or motor drive topologies where low conduction losses are critical.
Single FETs, MOSFETs Part Context
This part belongs to the SiR572DP series from Vishay Siliconix. It represents a single-channel enhancement mode device designed for surface mount applications. The product line emphasizes low on-resistance and robust switching performance within the PowerPAK SO-8 footprint.
Single FETs, MOSFETs Replacement Considerations
The datasheet identifies SIR572DP-T1-RE3 as the standard lead-free and halogen-free variant manufactured at the primary facility. Verify pinout and thermal parameters when substituting between manufacturing locations.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
