SIR632DP-T1-RE3

Single FETs, MOSFETs Overview

The SiR632DP is a Vishay Siliconix N-Channel MOSFET utilizing ThunderFET technology, housed in a PowerPAK SO-8 package. It features a drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 29 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 0.0345 Ω at VGS = 10 V and 0.0410 Ω at VGS = 7.5 V. Total gate charge (Qg) is typically 14 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• ThunderFET technology optimizes the balance between RDS(on), Qg, Qsw, and Qoss
• 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
• Lead-free and halogen-free compliant material categorization

Single FETs, MOSFETs Applications

• Fixed telecom systems
• DC/DC converters
• Primary and secondary side switching
• Battery management systems
• Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official Vishay documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free requirements. Ensure the package type corresponds to the PowerPAK SO-8 single configuration. Validate technical specifications against the latest datasheet revision prior to integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling up to 150 V with low conduction losses. The optimized gate charge facilitates efficient switching performance in power conversion circuits. Consider thermal management capabilities when designing for ambient temperatures exceeding standard limits. Verify compatibility with drive voltages of 10 V or 7.5 V for optimal on-resistance characteristics.

Single FETs, MOSFETs Part Context

This component belongs to the SiR series of N-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes ThunderFET technology to achieve superior electrical performance within a compact surface-mount footprint. The PowerPAK SO-8 package provides enhanced thermal dissipation compared to traditional packages, supporting high-current applications in dense PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides for verified alternatives. Ensure replacement parts maintain equivalent voltage ratings, current capabilities, and package dimensions. Verify that any substitute component meets the same thermal and switching performance criteria required for the specific application design.