ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
SIR680DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 80V 100A PPAK SO-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIR680DP-T1-RE3
- Description：MOSFET N-CH 80V 100A PPAK SO-8
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 7.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5150 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SIR680DP-T1-RE3
Single FETs, MOSFETs Overview
The SIR680DP-T1-RE3 is a single N-channel Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features an 80V drain-source voltage rating and a continuous drain current of 100A. The device exhibits a maximum on-resistance of 2900 µΩ. It operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 83W. The component is housed in a PowerPAK-SO-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for enhanced performance
- Designed for high-current applications with low on-resistance
- Supports surface-mount installation via PowerPAK-SO-8 package
Single FETs, MOSFETs Applications
- Power distribution systems
- DC-DC converter circuits
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and electrical parameters against official Vishay documentation before integration. Confirm that the PowerPAK-SO-8 footprint matches your PCB layout requirements. Ensure thermal management solutions align with the specified power dissipation limits under your operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when an 80V N-channel MOSFET with high current handling capability is required. The low on-resistance makes it suitable for efficiency-critical designs. Consider the PowerPAK-SO-8 package size constraints and thermal performance needs relative to alternative packages in the SIR series.
Single FETs, MOSFETs Part Context
This part belongs to the SIR series of N-channel MOSFETs manufactured by Vishay Siliconix. These devices are engineered for general-purpose power switching applications. The series offers various voltage and current ratings packaged in compact surface-mount formats to facilitate dense circuit board designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay substitution guides for verified alternatives. Cross-reference key parameters such as Vds, Id, Rds(on), and package type when evaluating potential replacements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
