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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：900pF @ 15V
- Power - Max：17.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SiR770DP-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET technology in a PowerPAK SO-8 package. Each channel provides a continuous drain current of 8 A at TC = 25 °C and a maximum on-state resistance of 0.021 Ω at VGS = 10 V. The device features a gate-source voltage rating of ± 20 V and operates within a junction temperature range of - 55 to + 150 °C. The integrated Schottky diode supports a forward current of 4.0 A with a typical forward voltage of 0.50 V at 1.0 A.
Feature Summary
- Dual N-channel configuration with integrated Schottky diode for synchronous rectification
- TrenchFET power MOSFET technology optimized for low on-resistance
- Lead-free and halogen-free construction compliant with IEC 61249-2-21
Applications
- Fixed telecom server power supplies
- Synchronous buck converters
- Point-of-load regulation modules
Procurement Notes
Verify the component authenticity by cross-referencing the manufacturer part number against official Vishay Siliconix documentation. Confirm that the ordering suffix corresponds to lead-free and halogen-free specifications as defined in the product summary. Ensure the received units match the PowerPAK SO-8 package outline dimensions before integration into the assembly process.
Selection Notes
Select this component when a compact dual-channel solution with body or integrated Schottky diodes is required for 30 V applications. Evaluate thermal performance based on the specific PCB copper area available for heat dissipation, as the package relies heavily on board-level cooling. Verify that the gate drive voltage meets the minimum requirements for achieving the specified low on-resistance values.
Part Context
This component belongs to the SiR series of dual MOSFETs from Vishay Siliconix. It combines two N-channel devices and a Schottky diode into a single surface-mount footprint. The PowerPAK SO-8 package allows for high current density while maintaining compatibility with standard SO-8 land patterns, facilitating direct replacement in existing designs requiring enhanced thermal performance.
Replacement Considerations
Direct pin-compatible replacements within the same family include SiR760DP and SiR780DP. Verify that substitute parts meet the required 30 V drain-source voltage and current handling capabilities. Check if the alternative device includes an integrated Schottky diode or requires external diode implementation.
