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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 40A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Rds On (Max) @ Id, Vgs：3.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：4290pF @ 20V
- Power - Max：46.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SiRB40DP-T1-GE3 is a dual N-channel 40 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET Gen IV technology and is housed in a PowerPAK SO-8 Dual package. The device features a maximum drain-source voltage of 40 V and a continuous drain current of 40 A at TC = 25 °C. The on-state resistance is typically 0.00325 Ω at VGS = 10 V and 0.00420 Ω at VGS = 4.5 V. Total gate charge is typically 29.5 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C, with a maximum power dissipation of 46.2 W at TC = 25 °C.
Feature Summary
- Tuned for the lowest RDS-Qoss figure of merit
- Optimized switching characteristics with Qgd/Qgs ratio less than 1
- 100% tested for gate resistance and unclamped inductive switching
Applications
- DC/DC converters
- DC/AC inverters
- Synchronous rectification
- Battery and load switch
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status as specified in the datasheet. Ensure ordering suffixes match the lead-free requirement. Validate that the specific batch meets material categorization definitions provided by Vishay.
Selection Notes
Select this component for applications requiring low conduction losses and optimized switching performance in a compact dual configuration. Evaluate thermal management requirements based on the junction-to-case thermal resistance. Consider the gate charge specifications for driver compatibility. Verify that the operating voltage and current limits align with the system design constraints.
Part Context
This part belongs to the SiRB series of dual N-channel MOSFETs from Vishay Siliconix. It shares the PowerPAK SO-8 Dual footprint with other devices in the family but offers distinct electrical characteristics tailored for high-efficiency power switching applications. The TrenchFET Gen IV technology differentiates it from earlier generations.
Replacement Considerations
Direct replacements must maintain the dual N-channel configuration, 40 V rating, and PowerPAK SO-8 Dual package. Verify pinout compatibility and ensure equivalent or superior electrical parameters for RDS(on), gate charge, and thermal resistance.
