SIS108DN-T1-GE3

$0.95

Description：MOSFET N-CH 80V 6.7A/16A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:047eaa74b62a Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIS108DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 80V 6.7A/16A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIS108DN-T1-GE3

Description：MOSFET N-CH 80V 6.7A/16A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：545 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 24W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SIS108DN-T1-GE3

SIS108DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiS108DN-T1-GE3 is a single N-channel 80 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source on-state resistance of 0.034 Ω at VGS = 10 V and 0.044 Ω at VGS = 7.5 V, with a typical total gate charge of 7.1 nC. The device supports a continuous drain current of 16 A and operates within a junction temperature range of -55 °C to +150 °C. It is housed in a leadless PowerPAK 1212-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

Tuned for the lowest RDS(on) x Qoss figure of merit
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Primary side switch
DC/DC converter
Motor drive switch
Boost converter
LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance details. Confirm that the component matches the required voltage and current ratings for the target circuit design. Ensure thermal management strategies align with the specified junction-to-ambient and junction-to-case thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low gate charge and optimized power loss characteristics. Consider the 80 V breakdown voltage and 16 A current capability when designing power stages. Evaluate the PowerPAK 1212-8 package dimensions for PCB layout constraints and verify compatibility with recommended minimum pad layouts for reliable soldering.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiS series of N-channel MOSFETs. It utilizes TrenchFET Gen IV technology to achieve enhanced performance metrics compared to previous generations. The device is designed for high-efficiency power switching applications where low conduction and switching losses are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters and package specifications.