SIS590DN-T1-GE3

$1.28

Description：MOSFET N/P-CH 100V 2.7A PPAK1212
Series：TrenchFET®

SKU:1cee1d30452a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 100V 2.7A PPAK1212
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs：167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：265pF 2 50V, 325pF @ 50V
Power - Max：2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 1212-8 Dual
Supplier Device Package：PowerPAK® 1212-8 Dual
Grade：-
Qualification：-

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SIS590DN-T1-GE3

Overview

The Vishay Siliconix SIS590DN-T1-GE3 is a dual MOSFET in a PowerPAK 1212-8 package, integrating an N-channel and a P-channel device. It features TrenchFET technology with a 100 V drain-source voltage rating for both channels. The N-channel exhibits a maximum on-resistance of 0.167 Ω at VGS = 10 V, while the P-channel reaches 0.251 Ω under identical conditions. Continuous drain current is rated at 4 A for both devices at case temperatures of 25 °C and 70 °C. The component operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

TrenchFET power MOSFET architecture
Thermally enhanced PowerPAK 1212-8 dual package
100% gate resistance tested

Applications

DC/DC converters
Active clamp circuits
Brushless DC motors
AC/DC inverters
Motor drive switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance status. Ensure the component matches the required thermal and electrical specifications for the target application environment. Cross-reference the document revision date to access the most current technical parameters and reliability data provided by the manufacturer.

Selection Notes

Select this dual MOSFET for applications requiring complementary switching in compact form factors. Evaluate thermal management requirements based on the specified junction-to-case resistance values. Confirm that the gate drive voltage levels align with the specified RDS(on) test conditions to ensure optimal conduction performance and switching efficiency.

Part Context

This component belongs to the Vishay Siliconix SiS590DN series of dual MOSFETs. It utilizes the PowerPAK 1212-8 package, which provides a thermally enhanced footprint suitable for surface mount assembly. The series integrates both N-channel and P-channel devices into a single unit to simplify circuit design and reduce board space consumption.

Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume compatibility with other dual MOSFET packages without verifying pinout, thermal resistance, and electrical parameter alignment.

FAQ

What is the maximum continuous drain current for the SIS590DN?

The maximum continuous drain current is 4 A for both the N-channel and P-channel devices when the case temperature is maintained at 25 °C or 70 °C.

Does the SIS590DN support avalanche energy ratings?

Yes, the datasheet specifies single pulse avalanche current and energy ratings for both channels, with the N-channel rated at 410 W and the P-channel at 5.0 W under specific inductive load conditions.