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Product Detailed Parameters
- Description：MOSFET 2N-CH 75V 4A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：75V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：186mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：175pF @ 38V
- Power - Max：15.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SiS902DN-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, rated for a drain-source voltage of 75 V. It utilizes TrenchFET technology and is housed in a compact PowerPAK 1212-8 package with a profile of 1.07 mm. The device features low thermal resistance and is tested for 100% Rg and UIS. Key electrical parameters include an on-state resistance (RDS(on)) of 0.186 Ω at VGS = 10 V and 0.228 Ω at VGS = 4.5 V. Continuous drain current is 4 A at TC = 25 °C, with a maximum power dissipation of 15.4 W at the same case temperature.
Feature Summary
- Dual N-channel configuration utilizing TrenchFET power MOSFET technology
- Low thermal resistance within a small-size PowerPAK 1212-8 package
- Manufactured to be halogen-free according to IEC 61249-2-21 definition
- Compliant with RoHS Directive 2002/95/EC
Applications
- Point-of-load (POL) conversion
Procurement Notes
Verify the specific ordering suffix -T1-GE3 to confirm lead-free and halogen-free status as documented. Ensure compatibility with the PowerPAK 1212-8 surface mount footprint. Manual soldering with an iron is not recommended; adhere to specified rework conditions and solder profiles provided in official documentation to maintain joint integrity.
Selection Notes
Select this component for applications requiring a 75 V rating and low on-resistance in a minimal footprint. Consider the 4 A continuous drain current limit at 25 °C case temperature when designing thermal management solutions. Verify gate drive requirements against the specified threshold voltages and total gate charge values for optimal switching performance.
Part Context
This part belongs to the SiS902DN series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed for high-efficiency power switching applications where space constraints are critical. The PowerPAK 1212-8 package provides a balance between thermal performance and board area efficiency compared to larger standard packages.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' dual MOSFETs without verifying pinout, voltage ratings, and thermal characteristics against the original specifications.
