SIS932EDN-T1-GE3

Overview

The SIS932EDN-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET power technology and is housed in a PowerPAK 1212-8 package. The device features a maximum drain-source voltage of 30 V, a continuous drain current of 6 A, and a typical gate charge of 9.2 nC. On-state resistance is specified at 0.022 Ω max at VGS = 4.5 V and 0.026 Ω max at VGS = 2.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual configuration with two independent N-channel MOSFETs integrated into a single leadless PowerPAK 1212-8 package for space-constrained designs.
• TrenchFET power technology providing low on-state resistance and optimized switching performance.
• High electrostatic discharge tolerance with a typical Human Body Model rating of 1900 V.
• Manufactured using lead-free and halogen-free compliant materials.

Applications

• DC/DC converters
• H-bridge circuits
• Load switch applications
• Battery protection systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and material compliance. Ensure that the component meets RoHS requirements and material categorization standards as defined by the manufacturer. Cross-reference the document number 74547 for the most current technical specifications and reliability data before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring dual N-channel isolation within a compact footprint. Evaluate thermal management requirements based on the junction-to-ambient and junction-to-case thermal resistance ratings. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance under expected load conditions.

Part Context

This part belongs to the SiS series of N-channel MOSFETs from Vishay Siliconix. It is designed for general-purpose switching applications where low RDS(on) and high efficiency are critical. The PowerPAK 1212-8 package offers improved thermal dissipation compared to traditional surface-mount packages while maintaining a small board area.

Replacement Considerations

Direct substitutes must match the dual N-channel configuration, 30 V VDS rating, and PowerPAK 1212-8 package dimensions. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or updated revisions within the same product family.

FAQ

What is the typical ESD tolerance for the SIS932EDN-T1-GE3?

The typical Electrostatic Discharge (ESD) tolerance via the Human Body Model (HBM) is 1900 V.

Is the SIS932EDN-T1-GE3 available in a lead-free package?

Yes, the SIS932EDN-T1-GE3 is explicitly listed as lead-free and halogen-free compliant.

What is the maximum power dissipation at a case temperature of 25 °C?

The maximum power dissipation is 23 W when the case temperature is maintained at 25 °C.