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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 12.1A PPAK1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：12.1A
- Rds On (Max) @ Id, Vgs：85mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：250pF @ 50V
- Power - Max：25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SiS990DN is a dual N-channel 100 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a maximum drain-source voltage of 100 V and a continuous drain current of 12.1 A at TC = 25 °C. The on-state resistance is specified as 0.085 Ω max at VGS = 10 V and ID = 8 A. Total gate charge is typically 3.3 nC at VGS = 6 V. The device operates within a junction temperature range of -55 to +150 °C and is housed in a leadless PowerPAK 1212-8 surface-mount package.
Feature Summary
- Dual N-channel configuration with independent gate and drain terminals for each channel
- TrenchFET power MOSFET architecture ensuring low on-state resistance
- Leadless PowerPAK 1212-8 package designed for high thermal efficiency and compact footprint
Applications
- DC/DC conversion circuits
- Primary side switching applications
- Synchronous rectification stages
- Industrial control systems
- 48 V battery monitoring equipment
- LED driver designs
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance attributes. Confirm that the component matches the required lead-free and halogen-free specifications. Validate the package type and pinout alignment before integration into the design. Ensure all technical parameters meet the operational requirements of the target application.
Selection Notes
Evaluate the thermal resistance characteristics relative to the available PCB copper area for heat dissipation. Consider the gate charge requirements for driving circuitry compatibility. Assess the continuous and pulsed drain current limits based on the expected operating temperature and case conditions. Verify the breakdown voltage margin against the maximum circuit voltage spikes.
Part Context
This component belongs to the SiS series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK 1212-8 package, which provides a small footprint with enhanced thermal performance compared to standard SO-8 packages. The device is part of the TrenchFET family, optimized for low on-resistance and fast switching speeds.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Verify electrical parameters and package dimensions match the original requirements.
