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SISA10DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 30A PPAK1212-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SISA10DN-T1-GE3
- Description：MOSFET N-CH 30V 30A PPAK1212-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds：2425 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® 1212-8
- Package / Case：PowerPAK® 1212-8
Single FETs, MOSFETs datasheet and documents for SISA10DN-T1-GE3
Single FETs, MOSFETs Overview
The SiSA10DN is a Vishay Siliconix N-Channel 30 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source on-state resistance of 0.0037 Ω at VGS = 10 V and 0.0050 Ω at VGS = 4.5 V. The device supports a continuous drain current of 30 A at TC = 25 °C and operates within a junction temperature range of -55 to +150 °C. Packaged in a leadless PowerPAK 1212-8, it offers low thermal impedance for high power density applications.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- 100% Rg and UIS tested for reliability
- Leadless PowerPAK 1212-8 package design
Single FETs, MOSFETs Applications
- High power density DC/DC converters
- Synchronous rectification circuits
- VRMs and embedded DC/DC systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix T1-GE3 against official documentation to confirm lead-free and halogen-free compliance status. Ensure that the PowerPAK 1212-8 package dimensions and exposed copper terminal requirements align with the target PCB land pattern specifications before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance is required at both standard 10 V and lower 4.5 V gate drive voltages. The PowerPAK 1212-8 package provides superior thermal performance compared to standard SMT packages, making it suitable for space-constrained designs requiring efficient heat dissipation without external heatsinks.
Single FETs, MOSFETs Part Context
This part belongs to the SiSA series of Vishay Siliconix MOSFETs. It utilizes the TrenchFET Gen IV process to achieve low RDS(on) values within a compact footprint. The PowerPAK 1212-8 package is a derivative of the PowerPAK SO-8, offering a smaller footprint while maintaining comparable thermal characteristics through an exposed die attach pad.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists for verified alternatives. Generic cross-references may not match the specific TrenchFET Gen IV electrical parameters or the exact PowerPAK 1212-8 mechanical dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
