SISB46DN-T1-GE3

Overview

The Vishay Siliconix SISB46DN-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 34 A at TC = 25 °C. The device offers a typical on-state resistance of 11.71 mΩ at VGS = 10 V and 15.8 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK 1212-8 surface-mount footprint, it supports a maximum power dissipation of 23 W at TC = 25 °C. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

• Tuned for the lowest RDS(on) x Qoss figure of merit
• Optimized switching characteristics with Qgd/Qgs ratio less than 1
• 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
• Leadless PowerPAK 1212-8 package provides low thermal impedance

Applications

• Synchronous rectification
• DC/DC converters
• Motor drive switches
• Battery and load switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance attributes such as halogen-free status and lead-free composition. Confirm that the component matches the exact Vishay part number and revision level required for the design. Ensure all technical parameters align with the application requirements before finalizing procurement.

Selection Notes

Select this component when space-constrained designs require high current handling in a small footprint. The low thermal resistance of the PowerPAK 1212-8 package allows for efficient heat dissipation without large external heatsinks. Evaluate the gate charge and threshold voltage to ensure compatibility with the intended driver circuitry for optimal switching performance.

Part Context

This component belongs to the SiSB series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK 1212-8 package, which shares pinouts with the PowerPAK SO-8 but offers a significantly smaller footprint. The series is designed for applications demanding high efficiency and compact form factors.

Replacement Considerations

Consult official Vishay documentation for qualified alternative part numbers within the same series or package type. Verify that any substitute maintains identical electrical ratings, thermal characteristics, and pinout configurations to ensure direct compatibility.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is +20 V and -16 V.

Is the device tested for unclamped inductive switching?

Yes, the datasheet specifies that 100% of the devices are tested for unclamped inductive switching (UIS).

What is the typical total gate charge?

The typical total gate charge (Qg) is 14.2 nC at VDS = 20 V, VGS = 10 V, and ID = 5 A.