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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 30.5A/60A PPAK
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：30.5A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2650pF @ 10V
- Power - Max：5.2W (Ta), 69.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8SCD
- Supplier Device Package：PowerPAK® 1212-8SCD
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SISF02DN-T1-GE3 is a common-drain dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features an integrated low source-to-source on-resistance optimized for bi-directional current flow in a compact PowerPAK 1212-8SCD package. The device supports a drain-source voltage of 25 V and a continuous source current of 60 A at TC = 25 °C. Maximum on-resistance is 3.5 mΩ at VGS = 10 V and 5.6 mΩ at VGS = 4.5 V. Gate charge is typically 16.9 nC at VGS = 4.5 V. Thermal resistance from junction to case is 1.4 °C/W typical, with a maximum operating junction temperature of 150 °C.
Feature Summary
- Integrated common-drain configuration enables bi-directional current flow
- TrenchFET Gen IV technology provides very low source-to-source on-resistance
- Compact and thermally enhanced PowerPAK 1212-8SCD leadless package
Applications
- Battery protection switch
- Bi-directional switch
- Load switch
Procurement Notes
Verify the specific ordering suffix -T1-GE3 against official Vishay documentation to confirm reel packaging and halogen-free compliance. Ensure the component matches the PowerPAK 1212-8SCD footprint requirements. Cross-reference datasheet revision S19-0104-Rev. A for accurate thermal and electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component when a low-profile solution for bi-directional switching is required. The common-drain topology simplifies circuit layout compared to discrete back-to-back configurations. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance level. Confirm thermal management capabilities align with the specified junction-to-case resistance ratings.
Part Context
This part belongs to the SISF series of dual N-channel MOSFETs designed specifically for applications requiring bidirectional current control. It utilizes flip-chip technology within the PowerPAK 1212-8SCD package to minimize parasitic inductance and improve thermal performance. The device represents an evolution in low-voltage power switching solutions offered by Vishay Siliconix.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum source-to-source on-resistance?
The maximum source-to-source on-resistance (RS1S2(on)) is 3.5 mΩ at VGS = 10 V and 5.6 mΩ at VGS = 4.5 V.
Is the device suitable for high-frequency switching?
Yes, the device exhibits low gate charge (typical 16.9 nC at VGS = 4.5 V) and fast switching times, making it suitable for high-frequency applications.
What is the recommended soldering profile?
The datasheet references a specific solder profile document (www.vishay.com/doc?73257). Manual soldering with an iron is not recommended for this leadless component.
