SISF04DN-T1-GE3

Overview

The Vishay Siliconix SiSF04DN-T1-GE3 is a common-drain dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features an integrated low source-to-source on-resistance in a compact PowerPAK 1212-8SCD package. The device supports a drain-source voltage of 30 V and a continuous drain current of 108 A at TC = 25 °C. Maximum on-resistance is 0.004 Ω at VGS = 10 V and 0.006 Ω at VGS = 4.5 V. Total gate charge is typically 19 nC at VDS = 10 V, with a maximum junction temperature rating of +150 °C.

Feature Summary

• Integrated common-drain configuration optimizes circuit layout for bi-directional current flow
• TrenchFET Gen IV technology provides very low source-to-source on-resistance
• Thermally enhanced leadless PowerPAK 1212-8SCD package design

Applications

• Battery protection switch
• Bi-directional switch
• Load switch

Procurement Notes

Verify the specific ordering suffix to ensure compliance with lead-free and halogen-free material requirements. Confirm that the component matches the PowerPAK 1212-8SCD package dimensions and pinout before integration into the PCB layout. Cross-reference the datasheet revision date to ensure all thermal and electrical specifications are current for the manufacturing batch.

Selection Notes

Select this component when a low-profile solution for high-current bidirectional switching is required. The common-drain topology simplifies circuit design by sharing a common ground reference between channels. Ensure the application's thermal management strategy accounts for the steady-state junction-to-case thermal resistance to maintain operation within the specified temperature limits.

Part Context

This part belongs to the Vishay Siliconix SiSF series of power MOSFETs. It utilizes the proprietary TrenchFET architecture to achieve superior performance metrics compared to standard planar devices. The specific model integrates two N-channel transistors in a single leadless package to minimize footprint while maximizing current handling capabilities.

Replacement Considerations

Direct replacements must match the 30 V rating, 1212-8SCD package, and common-drain configuration. Verify that alternative components offer comparable source-to-source on-resistance and gate charge characteristics to maintain switching speed and efficiency targets.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction and storage temperature range is -55 °C to +150 °C.

How does the common-drain configuration benefit circuit design?

It optimizes circuit layout for bi-directional current flow by integrating two N-channel MOSFETs with a shared drain connection.

Is the device tested for unclamped inductive switching?

Yes, the datasheet specifies that the device is 100% tested for both Rg (gate resistance) and UIS (unclamped inductive switching).