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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 22A 8POWERPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V, 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1510pF @ 15V, 1600pF @ 15V
- Power - Max：4.3W (Ta), 33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The SiZ200DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features an 8-terminal PowerPAIR 3 x 3S leadless package with dimensions of 3.3 mm by 3.3 mm. Channel-1 has a maximum on-state resistance of 5.5 mΩ at VGS = 10 V and 7.3 mΩ at VGS = 4.5 V, while Channel-2 is rated at 5.8 mΩ and 7.7 mΩ respectively. Continuous drain current reaches 61 A for Channel-1 and 60 A for Channel-2 at TC = 25 °C. The device supports a gate-source voltage range of +20 V to -16 V and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- Optimized Qgs/Qgd ratio for improved switching characteristics
- 100% Rg and UIS tested for reliability
Applications
- CPU core power
- Computer / server peripherals
- POL (Point-of-Load)
- Synchronous buck converter
- Telecom DC/DC
Procurement Notes
Verify the component against official Vishay datasheet document number 75033 to confirm authenticity. Ensure the ordering suffix matches the specified lead-free and halogen-free configuration. Validate that the PowerPAIR 3 x 3S package dimensions align with your PCB land pattern requirements before finalizing procurement.
Selection Notes
Select this component for applications requiring low on-resistance in a compact surface-mount footprint. Consider the thermal resistance ratings when designing heatsinking solutions. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance. Evaluate the continuous drain current capabilities against the expected load conditions at the operating case temperature.
Part Context
This part belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 3 x 3S leadless package, which provides enhanced thermal performance compared to traditional packages. The TrenchFET Gen IV technology differentiates it from earlier generations by offering optimized switching characteristics and lower gate charge values.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical parameters, and thermal characteristics.
