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Product Detailed Parameters
- Description：MOSFET 2N-CH 70V 11.5A 8PWRPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：70V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Ta), 31.8A (Tc)
- Rds On (Max) @ Id, Vgs：17.6mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 35V
- Power - Max：4.3W (Ta), 33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The SiZ256DT is a dual N-channel power MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 3 x 3S leadless package with dimensions of 3.3 mm by 3.3 mm. The device provides a drain-source voltage (VDS) of 70 V and a continuous drain current (ID) of 31.8 A at TC = 25 °C. Maximum on-state resistance (RDS(on)) is 17.6 mΩ at VGS = 4.5 V and 20.0 mΩ at VGS = 3.3 V. Total gate charge (Qg) is typically 8.2 nC at VGS = 4.5 V. Thermal performance includes a junction-to-case resistance (RthJC) of 33.8 °C/W and a maximum junction temperature range of -55 °C to +150 °C.
Feature Summary
- Integrated half-bridge power stage configuration for synchronous applications
- Optimized Qgs/Qgd ratio to enhance switching characteristics
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Applications
- Point-of-load (POL) converters
- Synchronous buck converter topologies
- Telecommunications DC/DC conversion
- Resonant converter circuits
- Motor drive control systems
Procurement Notes
Verify the component against official Vishay datasheet document number 79711 to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free compliance standards. Validate that the PowerPAIR 3 x 3S package orientation aligns with the target PCB land pattern design requirements.
Selection Notes
Select this component for high-density designs requiring a compact 3.3 x 3.3 mm footprint. Evaluate thermal management strategies based on the specified RthJC of 33.8 °C/W for steady-state conditions. Confirm that the 70 V breakdown voltage and 31.8 A current rating exceed the peak operational demands of the specific circuit application.
Part Context
This part belongs to the SiZ series of TrenchFET Gen IV power MOSFETs manufactured by Vishay Siliconix. It is designed as a complementary pair within a single leadless package to minimize parasitic inductance and improve efficiency in high-frequency switching applications compared to discrete solutions.
Replacement Considerations
Direct pin-compatible replacements are not explicitly listed in the provided documentation. Verify alternative dual N-channel MOSFETs with similar 70 V ratings and comparable RDS(on) values in the PowerPAIR 3 x 3S package.
