SIZ300DT-T1-GE3

$1.41

Description：MOSFET 2N-CH 30V 11A 8POWERPAIR
Series：TrenchFET®

SKU:9bb3ffbdeeb7 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 11A 8POWERPAIR
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：11A, 28A
Rds On (Max) @ Id, Vgs：24mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：400pF @ 15V
Power - Max：16.7W, 31W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair®
Grade：-
Qualification：-

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SIZ300DT-T1-GE3

Overview

The SiZ300DT is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAIR 3 x 3 package. Channel-1 features an on-resistance of 24 mΩ at 10 V gate drive with a continuous drain current of 11 A, while Channel-2 offers 11 mΩ resistance with a 28 A rating. The device supports a maximum junction temperature of 150 °C and includes 100% Rg and UIS testing for reliability.

Feature Summary

Optimized for high-side and low-side MOSFETs in synchronous buck converters
Utilizes TrenchFET power MOSFET technology
Includes 100% Rg and UIS testing

Applications

Computing system power
Point-of-load (POL)
Synchronous buck converter

Procurement Notes

Verify the component against the official datasheet document number 67715 to confirm technical specifications and compliance status. Ensure that the ordering suffix matches the required lead-free and halogen-free configuration. Cross-reference the manufacturer part number SIZ300DT-T1-GE3 with authorized distributors to validate authenticity and traceability before finalizing procurement.

Selection Notes

Select this component based on the specific requirements for dual N-channel configurations within a compact PowerPAIR 3 x 3 footprint. Evaluate the distinct performance characteristics of Channel-1 and Channel-2 to ensure they align with the load demands of the intended circuit design. Consider thermal management capabilities and the maximum operating temperature range when integrating the device into the system architecture.

Part Context

The SiZ300DT belongs to the Vishay Siliconix lineup of dual N-channel MOSFETs designed for high-efficiency power conversion applications. It is specifically engineered to optimize both high-side and low-side switching in synchronous buck converters. The integration of TrenchFET technology allows for reduced on-resistance and improved switching performance within a compact surface-mount package.