ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 30A 8PWR33
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：6.35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：950pF @ 12.5V
- Power - Max：16.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-Power33 (3x3)
- Grade：-
- Qualification：-
Download product information
Overview
The SiZ322DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 3 x 3 package with a drain-source voltage of 25 V and a continuous drain current of 30 A at TC = 25 °C. The maximum on-state resistance is 6.35 mΩ at VGS = 10 V and 9.0 mΩ at VGS = 4.5 V. Total gate charge is typically 6.2 nC at VGS = 4.5 V and 13.4 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- High-side and low-side MOSFETs form an optimized combination for 50% duty cycle applications.
- Optimized RDS(on)-Qg and RDS(on)-Qgd figure of merit elevates efficiency for high-frequency switching.
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS).
Applications
- Synchronous buck converters
- DC/DC conversion circuits
- Half-bridge configurations
- Point-of-load (POL) power supplies
Procurement Notes
Verify the component against official Vishay datasheet specifications before integration. Confirm that the ordering suffix matches the required lead-free and halogen-free status. Ensure the PowerPAIR 3 x 3 package dimensions align with the target PCB layout requirements.
Selection Notes
Select this component for applications requiring low gate charge and optimized switching efficiency. Verify that the 25 V drain-source voltage rating accommodates circuit transients. Ensure the thermal management design accounts for the specified junction-to-case thermal resistance under expected load conditions.
Part Context
This part belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET Gen IV technology to achieve low on-resistance and fast switching characteristics within a compact PowerPAIR package suitable for surface mount assembly.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage rating is +16 V and -12 V.
Is the device tested for unclamped inductive switching?
Yes, the datasheet specifies that 100% of the devices are tested for unclamped inductive switching (UIS).
What is the typical total gate charge at VGS = 4.5 V?
The typical total gate charge (Qg) at VGS = 4.5 V and ID = 19 A is 6.2 nC.
