SIZ342DT-T1-GE3

Overview

The SiZ342DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 3 x 3 leadless package with dimensions of 3 mm by 3 mm and a maximum height of 0.80 mm. The device provides a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of +20 V / -16 V. At VGS = 10 V, the typical on-state resistance (RDS(on)) is 0.0084 Ω with a maximum of 0.0115 Ω at an ID of 14.4 A. At VGS = 4.5 V, RDS(on) is typically 0.0111 Ω with a maximum of 0.0153 Ω at an ID of 13 A. The continuous drain current (ID) reaches 30 A at TC = 25 °C and 15.6 A at TA = 25 °C. Total gate charge (Qg) is typically 4.5 nC at VGS = 4.5 V and 10 nC at VGS = 10 V.

Feature Summary

• Optimized for synchronous buck converters through PowerPAIR high-side and low-side matching
• Utilizes TrenchFET Gen IV power MOSFET technology for enhanced performance
• Includes 100% Rg and UIS testing to ensure reliability

Applications

• Synchronous buck converters for battery charging
• Computer system power supplies
• Graphic card power delivery
• Point-of-load (POL) applications

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet documentation. Confirm compliance status via the material categorization definitions provided in Vishay's documentation. Ensure the ordering suffix matches the required lead-free and halogen-free specifications. Validate that the specific batch aligns with the qualified manufacturing locations listed in the product data sheet.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage synchronous rectification. The PowerPAIR 3 x 3 package offers a small footprint suitable for space-constrained designs. Consider the thermal resistance ratings and derating curves to ensure adequate heat dissipation under steady-state conditions. Verify that the gate drive voltage supports the specified RDS(on) thresholds for optimal efficiency.

Part Context

The SiZ342DT belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed specifically for applications requiring matched channel characteristics in synchronous topologies. The device integrates two independent N-channel MOSFETs within a single leadless PowerPAIR package to minimize parasitic inductance and improve switching performance.

Replacement Considerations

Direct substitutes must match the 30 V VDS rating, dual N-channel configuration, and PowerPAIR 3 x 3 package dimensions. Verify that alternative components offer comparable RDS(on) values at the intended gate drive voltages and similar thermal resistance characteristics to maintain circuit performance.