SIZ702DT-T1-GE3

Overview

The SiZ702DT is a Vishay Siliconix N-channel enhancement mode MOSFET featuring TrenchFET technology. It provides dual channels in a leadless PowerPAIR 6 x 3.7 surface-mount package. The device supports a drain-source voltage of 30 V and continuous drain currents up to 14 A at TA = 25 °C. On-state resistance is specified as 12 mΩ at VGS = 10 V and 14.5 mΩ at VGS = 4.5 V, with a typical total gate charge of 14 nC. Thermal performance includes a junction-to-case resistance of 3.5 °C/W (max) per channel. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Utilizes TrenchFET power MOSFET technology for optimized on-resistance and switching characteristics.
• Includes 100% gate resistance and unclamped inductive switching (UIS) testing for reliability assurance.
• Constructed using halogen-free materials compliant with IEC 61249-2-21 standards.

Applications

• Notebook system power distribution
• Point-of-load (POL) regulation
• Low current DC/DC conversion

Procurement Notes

Verify the component against official datasheet specifications before integration. Confirm that the ordering suffix matches the required lead-free and halogen-free attributes. Ensure thermal management designs account for the specific junction-to-case resistance limits provided in the documentation.

Selection Notes

Select this component for applications requiring low on-resistance in a compact footprint. Evaluate the thermal derating curves to ensure continuous current ratings are met under actual operating conditions. Verify that the gate drive voltage aligns with the specified RDS(on) test conditions for optimal efficiency.

Part Context

This part belongs to the Vishay Siliconix SiZ series of dual N-channel MOSFETs. It utilizes the PowerPAIR leadless package design, which eliminates traditional leads to reduce parasitic inductance and improve thermal dissipation compared to standard surface-mount packages.

Replacement Considerations

Check for direct replacements within the SiZ family that share identical pinouts and thermal profiles. Verify that any substitute maintains the same 30 V rating and comparable RDS(on) values to ensure circuit compatibility without redesigning the PCB layout.

FAQ

What is the maximum junction temperature for the SiZ702DT?

The maximum operating junction temperature is 150 °C.

Is the SiZ702DT suitable for high-frequency switching applications?

Yes, it features low input capacitance and fast switching times, supported by 100% UIS testing.

How is the PowerPAIR package terminated?

It is a leadless package where the end of the lead terminal is exposed copper resulting from the singulation process.