SIZ710DT-T1-GE3

SIZ710DT-T1-GE3

$1.73
  • Description:MOSFET 2N-CH 20V 16A 6POWERPAIR
  • Series:TrenchFET®

SKU:62818b0146cd Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 16A 6POWERPAIR
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:16A, 35A
  • Rds On (Max) @ Id, Vgs:6.8mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:820pF @ 10V
  • Power - Max:27W, 48W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-PowerPair™
  • Supplier Device Package:6-PowerPair™
  • Grade:-
  • Qualification:-

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SIZ710DT-T1-GE3

Overview

The SIZ710DT-T1-GE3 is a dual N-channel 20 V Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a leadless PowerPAIR 6 x 3.7 mm package. It integrates an asymmetric pair of low-side and high-side transistors within a compact footprint. Channel-1 features a maximum on-resistance of 6.8 mΩ at VGS = 10 V with a continuous drain current of 16 A. Channel-2 offers a lower on-resistance of 3.3 mΩ at VGS = 10 V, supporting up to 35 A. The device operates across a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • Integrates asymmetric dual N-channel MOSFETs for low-side and high-side switching applications
  • Utilizes TrenchFET Gen III technology to achieve reduced on-resistance and improved efficiency
  • Constructed in a leadless PowerPAIR surface-mount package designed for optimized thermal performance

Applications

  • Notebook system power distribution
  • Point-of-load (POL) conversion stages
  • Synchronous buck converter topologies

Procurement Notes

Verify the component status before integration, as official distributor records indicate this specific part number may be obsolete or subject to discontinuation by the manufacturer. Confirm availability through authorized channels and validate that the received units match the datasheet specifications regarding pinout and electrical parameters prior to circuit implementation.

Selection Notes

Select this component when space-constrained designs require integrated dual switching capabilities with distinct current handling requirements per channel. The asymmetric configuration allows optimization for both control and power stages within a single package. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance and verify thermal management strategies meet the junction-to-case resistance limits.

Part Context

This device belongs to the SiZ710DT family of Vishay Siliconix power MOSFETs. It represents an evolution in TrenchFET technology, offering significant reductions in on-resistance compared to previous generations while maintaining a small physical profile. The product line targets mobile and portable electronics where board area and power efficiency are critical design constraints.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

SIZ710DT-T1-GE3SIZ710DT-T1-GE3
$1.73
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