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The SIZ710DT-T1-GE3 is a dual N-channel 20 V Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a leadless PowerPAIR 6 x 3.7 mm package. It integrates an asymmetric pair of low-side and high-side transistors within a compact footprint. Channel-1 features a maximum on-resistance of 6.8 mΩ at VGS = 10 V with a continuous drain current of 16 A. Channel-2 offers a lower on-resistance of 3.3 mΩ at VGS = 10 V, supporting up to 35 A. The device operates across a junction temperature range of -55 °C to +150 °C.
Verify the component status before integration, as official distributor records indicate this specific part number may be obsolete or subject to discontinuation by the manufacturer. Confirm availability through authorized channels and validate that the received units match the datasheet specifications regarding pinout and electrical parameters prior to circuit implementation.
Select this component when space-constrained designs require integrated dual switching capabilities with distinct current handling requirements per channel. The asymmetric configuration allows optimization for both control and power stages within a single package. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance and verify thermal management strategies meet the junction-to-case resistance limits.
This device belongs to the SiZ710DT family of Vishay Siliconix power MOSFETs. It represents an evolution in TrenchFET technology, offering significant reductions in on-resistance compared to previous generations while maintaining a small physical profile. The product line targets mobile and portable electronics where board area and power efficiency are critical design constraints.
Public confirmed substitute part numbers are not available in the provided documentation.