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The SiZ720DT-T1-GE3 is a Vishay Siliconix dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a PowerPAIR 6 x 3.7 surface-mount package with six pins. The device provides two independent channels within a single component. Channel-1 offers a maximum drain-source voltage of 20 V and a continuous drain current of 16 A, with an on-resistance of 8.7 mΩ at VGS = 10 V. Channel-2 shares the same voltage rating but supports up to 20 A, with an on-resistance of 6.2 mΩ at VGS = 10 V. Both channels are tested for gate resistance and unclamped inductive switching.
Verify the specific ordering suffix against official documentation to confirm environmental compliance status. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to prevent counterfeit parts. Confirm that the delivered units match the exact part number designation provided in the datasheet.
Select this component when space-constrained designs require dual isolated N-channel switches. Evaluate thermal performance based on the junction-to-case resistance ratings provided in the specifications. Consider the distinct current capabilities of each channel to optimize board layout and heat dissipation strategies effectively.
This component belongs to the SiZ series of dual MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR package format, which is characterized by its leadless design and exposed copper terminals resulting from the singulation process during manufacturing.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original voltage and current ratings specified in the datasheet.
The maximum operating junction and storage temperature range is -55 °C to +150 °C.
The PowerPAIR is a leadless package where the end of the lead terminal is exposed copper. A solder fillet at the exposed copper tip cannot be guaranteed and is not required for adequate bottom-side interconnection.
The datasheet specifies applications in notebook system power, POL, and low current DC/DC converters. Specific suitability for high-side driving requires validation of gate drive requirements against the threshold voltage specifications.