SIZ720DT-T1-GE3

SIZ720DT-T1-GE3

  • Description:MOSFET 2N-CH 20V 16A 6POWERPAIR
  • Series:TrenchFET®

SKU:1719e9875fe6 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 16A 6POWERPAIR
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:16A
  • Rds On (Max) @ Id, Vgs:8.7mOhm @ 16.8A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:825pF @ 10V
  • Power - Max:27W, 48W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-PowerPair™
  • Supplier Device Package:6-PowerPair™
  • Grade:-
  • Qualification:-

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SIZ720DT-T1-GE3

Overview

The SiZ720DT-T1-GE3 is a Vishay Siliconix dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a PowerPAIR 6 x 3.7 surface-mount package with six pins. The device provides two independent channels within a single component. Channel-1 offers a maximum drain-source voltage of 20 V and a continuous drain current of 16 A, with an on-resistance of 8.7 mΩ at VGS = 10 V. Channel-2 shares the same voltage rating but supports up to 20 A, with an on-resistance of 6.2 mΩ at VGS = 10 V. Both channels are tested for gate resistance and unclamped inductive switching.

Feature Summary

  • Dual N-channel configuration integrating two independent MOSFETs in a compact leadless PowerPAIR package.
  • TrenchFET power technology designed for low on-resistance and high efficiency.
  • Compliant with RoHS Directive 2002/95/EC and defined as halogen-free according to IEC 61249-2-21.
  • Manufactured with 100% gate resistance and unclamped inductive switching (UIS) testing.

Applications

  • Notebook system power distribution
  • Point-of-load (POL) conversion
  • Low current DC/DC converter circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to prevent counterfeit parts. Confirm that the delivered units match the exact part number designation provided in the datasheet.

Selection Notes

Select this component when space-constrained designs require dual isolated N-channel switches. Evaluate thermal performance based on the junction-to-case resistance ratings provided in the specifications. Consider the distinct current capabilities of each channel to optimize board layout and heat dissipation strategies effectively.

Part Context

This component belongs to the SiZ series of dual MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR package format, which is characterized by its leadless design and exposed copper terminals resulting from the singulation process during manufacturing.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original voltage and current ratings specified in the datasheet.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction and storage temperature range is -55 °C to +150 °C.

How does the PowerPAIR package affect soldering?

The PowerPAIR is a leadless package where the end of the lead terminal is exposed copper. A solder fillet at the exposed copper tip cannot be guaranteed and is not required for adequate bottom-side interconnection.

Are these devices suitable for high-side driver applications?

The datasheet specifies applications in notebook system power, POL, and low current DC/DC converters. Specific suitability for high-side driving requires validation of gate drive requirements against the threshold voltage specifications.

SIZ720DT-T1-GE3SIZ720DT-T1-GE3

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