SIZ728DT-T1-GE3

Overview

The SiZ728DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology within a PowerPAIR 6 x 3.7 leadless package. It features two independent channels with a drain-source voltage (VDS) of 25 V and a gate-source voltage (VGS) rating of ±20 V. Channel-1 offers an on-resistance (RDS(on)) of 7.7 mΩ at VGS = 10 V and a continuous drain current (ID) of 16 A. Channel-2 provides a lower RDS(on) of 3.5 mΩ at VGS = 10 V with a continuous ID of 35 A. The device operates across a junction temperature range of -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET architecture for optimized switching performance
• Leadless PowerPAIR package design maximizing thermal dissipation
• Halogen-free construction compliant with IEC 61249-2-21 standards
• 100% tested for gate resistance and unclamped inductive switching

Applications

• System power management for notebook computers
• Server power distribution networks
• Point-of-load (POL) conversion stages
• Synchronous buck converter topologies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm halogen-free status and tape-and-reel packaging configuration. Ensure that the component's absolute maximum ratings are not exceeded during operation. Confirm compliance with RoHS Directive 2002/95/EC requirements prior to integration into final assemblies.

Selection Notes

Select this component when low on-resistance and high current handling are required in a compact footprint. Channel-2 is suitable for higher current paths, while Channel-1 serves lower current applications. Evaluate thermal resistance characteristics based on the specific PCB copper area available for heat dissipation.

Part Context

This part belongs to the SiZ series of Vishay Siliconix dual N-channel MOSFETs. It utilizes the PowerPAIR 6 x 3.7 surface-mount package, which is designed for efficient thermal transfer through direct contact with the substrate.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original 25 V breakdown voltage and current specifications.

FAQ

What is the maximum junction-to-case thermal resistance?

The maximum junction-to-case thermal resistance is 4.6 °C/W for Channel-1 and 2.6 °C/W for Channel-2 under steady-state conditions.

How does the on-resistance vary with gate voltage?

At VGS = 10 V, RDS(on) is 7.7 mΩ for Channel-1 and 3.5 mΩ for Channel-2. At VGS = 4.5 V, it increases to 11.0 mΩ and 4.8 mΩ respectively.

Is the device suitable for unclamped inductive switching?

Yes, the datasheet confirms that 100% of units are tested for unclamped inductive switching (UIS) capability.