SIZ790DT-T1-GE3

Overview

The SiZ790DT is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing Vishay's SkyFET monolithic TrenchFET technology. Channel-1 offers a maximum RDS(on) of 9.3 mΩ at VGS = 10 V and 13.0 mΩ at VGS = 4.5 V, with a continuous drain current of 16 A. Channel-2 provides a lower on-resistance of 4.7 mΩ at VGS = 10 V and 5.9 mΩ at VGS = 4.5 V, supporting up to 35 A. The device is housed in a leadless PowerPAIR 6 x 3.7 surface-mount package.

Feature Summary

• SkyFET monolithic integration combining two N-channel MOSFETs and a Schottky diode
• TrenchFET power MOSFET technology optimized for low on-resistance
• 100% gate resistance and unclamped inductive switching (UIS) tested

Applications

• System power for notebook computers
• Server power distribution
• Point-of-load (POL) conversion
• Synchronous buck converter circuits

Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance per IEC 61249-2-21 standards. Confirm the component matches the SkyFET architecture containing both MOSFET channels and the integrated Schottky diode within the specified PowerPAIR package dimensions.

Selection Notes

Select this component when a compact solution requires two asymmetric N-channel MOSFETs and a freewheeling diode in a single footprint. Channel-2 is suitable for high-current paths due to its lower on-resistance, while Channel-1 serves standard switching duties. Ensure thermal management accounts for the junction-to-ambient resistance ratings provided in the datasheet.

Part Context

This part belongs to the SiZ series of SkyFET devices from Vishay Siliconix. It integrates multiple semiconductor functions into one leadless PowerPAIR package to reduce board space and parasitic inductance compared to discrete component arrangements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the verified source material.