SIZ900DT-T1-GE3

$1.00

Description：MOSFET 2N-CH 30V 24A 6POWERPAIR
Series：TrenchFET®

SKU:65ffd3150478 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 24A 6POWERPAIR
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：24A, 28A
Rds On (Max) @ Id, Vgs：7.2mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1830pF @ 15V
Power - Max：48W, 100W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-PowerPair™
Supplier Device Package：6-PowerPair™
Grade：-
Qualification：-

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SIZ900DT-T1-GE3

Overview

The SiZ900DT is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. Channel-1 offers a maximum on-resistance of 72 mΩ at 10 V gate drive with a continuous current of 24 A, while Channel-2 provides 39 mΩ at 10 V with a 28 A rating. The device is housed in a leadless PowerPAIR 6 x 5 package, ensuring compliance with RoHS directives and IEC halogen-free standards.

Feature Summary

TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAIR surface-mount package design
Halogen-free construction compliant with IEC 61249-2-21
100% tested for gate resistance and unclamped inductive switching

Applications

Notebook system power distribution
Point-of-load (POL) regulation circuits
Synchronous buck converter topologies

Procurement Notes

Verify the specific ordering suffix GE3 to confirm lead-free and halogen-free material composition as documented. Confirm that the component matches the exact Vishay part number to ensure correct pinout alignment within the PowerPAIR 6 x 5 footprint. Cross-reference thermal resistance values against your specific PCB copper area requirements.

Selection Notes

Select this component for applications requiring low on-resistance in a compact form factor. Evaluate the distinct electrical characteristics between Channel-1 and Channel-2 to determine optimal usage within the circuit. Ensure the gate drive voltage aligns with the specified thresholds for minimum on-state resistance. Verify thermal management capabilities against the provided junction-to-case resistance ratings.

Part Context

This component belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR leadless package technology designed for high-density surface mount applications. The device integrates two independent channels within a single compact footprint to support efficient power conversion designs.