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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 16A 8POWERPAIR
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：16A
- Rds On (Max) @ Id, Vgs：12mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：790pF @ 15V
- Power - Max：29W, 66W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SiZ902DT is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET power technology and is housed in a PowerPAIR 6 x 5 surface-mount package. The device features two independent channels with distinct electrical characteristics. Channel-1 has a maximum on-resistance of 12 mΩ at VGS = 10 V, while Channel-2 offers a lower resistance of 6.4 mΩ under the same conditions. Both channels support a continuous drain current of 16 A. The component operates within a junction temperature range of -55 °C to +150 °C and includes 100% gate resistance and UIS testing.
Feature Summary
- TrenchFET power MOSFET technology for optimized performance
- Dual N-channel configuration with asymmetric channel specifications
- Leadless PowerPAIR 6 x 5 surface mount package design
Applications
- Notebook system power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
Procurement Notes
Verify the specific datasheet revision and document number against official Vishay records before procurement. Confirm that the ordering suffix matches the required lead-free and halogen-free compliance standards. Ensure the package type aligns with the recommended minimum pad pattern provided in the manufacturer's documentation to guarantee adequate solder interconnection.
Selection Notes
Select this component based on the specific requirements of each channel, as they possess different on-resistance values and gate charge characteristics. Channel-2 provides lower conduction losses compared to Channel-1. Evaluate thermal resistance ratings carefully, noting the differences between steady-state junction-to-case and transient impedance values when designing heat dissipation strategies for the application.
Part Context
The SiZ902DT belongs to the Vishay Siliconix PowerPAIR series of dual MOSFETs. This series is designed for high-density surface-mount applications requiring efficient power switching. The device integrates two N-channel MOSFETs into a single compact footprint, facilitating space-constrained designs in portable electronics and power supply modules.
Replacement Considerations
Consult the official Vishay datasheet or contact technical support for confirmed substitute part numbers. Do not assume cross-compatibility with other models without verifying pinout, voltage ratings, and thermal characteristics.
