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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 12A 6POWERPAIR
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：12A, 16A
- Rds On (Max) @ Id, Vgs：24mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：435pF @ 15V
- Power - Max：20W, 33W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerPair™
- Supplier Device Package：6-PowerPair™
- Grade：-
- Qualification：-
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Overview
The SiZ904DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAIR 6 x 5 surface-mount package. The device features two independent channels with distinct electrical characteristics. Channel-1 has a maximum on-resistance of 24 mΩ at VGS = 10 V, while Channel-2 offers a lower resistance of 13.5 mΩ under the same conditions. Continuous drain currents are rated at 12 A for Channel-1 and 16 A for Channel-2 at a case temperature of 25 °C. The component supports an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- TrenchFET power MOSFET architecture
- Dual N-Channel configuration
- Leadless PowerPAIR 6 x 5 package
Applications
- Notebook system power
- Point-of-load (POL) conversion
- Low current DC/DC converters
Procurement Notes
Verify the specific datasheet revision and document number against official Vishay records before finalizing procurement. Confirm that the lead-free and halogen-free status aligns with project compliance requirements. Ensure the ordering suffix matches the required reel or cut tape packaging format. Validate thermal management designs against the provided junction-to-case resistance values.
Selection Notes
Select this component when a compact dual-channel solution is required for low-voltage applications. Evaluate the asymmetric channel performance, as Channel-2 provides significantly lower on-resistance compared to Channel-1. Consider the PowerPAIR package dimensions for PCB layout constraints. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.
Part Context
This part belongs to the SiZ series of dual N-channel MOSFETs from Vishay Siliconix. It is designed for space-constrained portable electronics where multiple switching elements are needed. The PowerPAIR package provides a leadless footprint optimized for high-density surface mounting.
Replacement Considerations
Direct replacements must match the 30 V rating, dual N-channel configuration, and PowerPAIR 6 x 5 package. Verify pinout compatibility and ensure thermal resistance characteristics meet the application's dissipation requirements.
