SIZ910DT-T1-GE3

$1.62

Description：MOSFET 2N-CH 30V 40A 8POWERPAIR
Series：TrenchFET®

SKU:ff8e4d2c8662 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 40A 8POWERPAIR
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：40A
Rds On (Max) @ Id, Vgs：5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1500pF @ 15V
Power - Max：48W, 100W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair® (6x5)
Grade：-
Qualification：-

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SIZ910DT-T1-GE3

Overview

The SiZ910DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It features an asymmetric configuration within the PowerPAIR 6 x 5 package. Channel-1 has a maximum RDS(on) of 0.0058 Ω at VGS = 10 V and 0.0075 Ω at VGS = 4.5 V, with a typical gate charge of 12.5 nC. Channel-2 exhibits lower resistance, rated at 0.0030 Ω at VGS = 10 V and 0.0035 Ω at VGS = 4.5 V, with a typical gate charge of 29 nC. Both channels support a continuous drain current of 40 A at TC = 25 °C. The device operates within a junction temperature range of -55 to +150 °C.

Feature Summary

Asymmetric dual N-channel architecture optimized for synchronous buck converter topologies
Halogen-free construction compliant with IEC 61249-2-21 standards
100% tested for on-resistance and single-pulse avalanche energy

Applications

Notebook system power distribution
Point-of-load (POL) regulation
Synchronous buck converter circuits

Procurement Notes

Verify component authenticity through authorized Vishay distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against the latest datasheet revision. Ensure storage conditions maintain device integrity prior to assembly. Validate ordering suffixes match specific lead-free requirements.

Selection Notes

Select this component for low-voltage DC/DC applications requiring high efficiency in compact footprints. Evaluate thermal management strategies based on the specified junction-to-case resistance values. Consider the asymmetric channel characteristics when designing synchronous rectification stages to optimize switching losses and conduction performance.

Part Context

The SiZ910DT belongs to Vishay's PowerPAIR family of dual-chip asymmetric power MOSFETs designed for low-voltage DC/DC converters. This series expands options for space-constrained designs by integrating two distinct N-channel devices into a single leadless package, facilitating efficient board layout for power supply modules.