SIZ916DT-T1-GE3

Description：MOSFET 2N-CH 30V 16A 8POWERPAIR
Series：TrenchFET®

SKU:a12763772aef Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 16A 8POWERPAIR
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：16A, 40A
Rds On (Max) @ Id, Vgs：6.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1208pF @ 15V
Power - Max：22.7W, 100W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair® (6x5)
Grade：-
Qualification：-

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SIZ916DT-T1-GE3

Overview

The SiZ916DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features an asymmetric configuration within the PowerPAIR 6 x 5 leadless package. Channel-1 provides a maximum on-resistance of 6.4 mΩ at VGS = 10 V and a continuous drain current of 16 A. Channel-2 offers a lower resistance of 1.3 mΩ at VGS = 10 V with a continuous drain current of 40 A. The device supports a gate-source voltage range of +20 V and -16 V, operates between -55 °C and +150 °C, and includes 100% Rg and UIS testing.

Feature Summary

Asymmetric dual N-channel architecture optimized for distinct load requirements
TrenchFET Gen IV power MOSFET technology for enhanced efficiency
Leadless PowerPAIR 6 x 5 package design for superior thermal performance

Applications

CPU core power regulation
Computer and server peripheral power management
Synchronous buck converter circuits
Point-of-load (POL) conversion
Telecom DC/DC power supplies

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number SiZ916DT-T1-GE3 against official Vishay documentation. Confirm compliance with RoHS and halogen-free standards as specified in the ordering information. Ensure that the received components match the PowerPAIR 6 x 5 physical dimensions and pinout configuration to prevent integration errors during assembly.

Selection Notes

Select this component when designing asymmetric dual-channel power stages requiring different current handling capabilities within a single footprint. Evaluate the specific thermal resistance values for both channels under steady-state conditions to ensure adequate heat dissipation. Consider the low gate charge characteristics for high-frequency switching applications where drive losses are critical.

Part Context

This component belongs to the SiZ916DT series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the proprietary TrenchFET Gen IV process to achieve low on-resistance and fast switching speeds. The product is housed in the PowerPAIR 6 x 5 leadless package, which is designed to maximize surface area for efficient heat transfer to the printed circuit board.