SIZ920DT-T1-GE3

Overview

The SiZ920DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage and operates within a -55 °C to +150 °C junction temperature range. Channel-1 has a maximum on-resistance of 7.1 mΩ at VGS = 10 V and 8.9 mΩ at VGS = 4.5 V, with a typical gate charge of 10.5 nC. Channel-2 offers lower resistance, rated at 3.0 mΩ at VGS = 10 V and 3.5 mΩ at VGS = 4.5 V, with a typical gate charge of 29 nC. Both channels support a continuous drain current of 40 A at TC = 25 °C. The device is housed in a leadless PowerPAIR 6 x 5 package.

Feature Summary

• Dual N-channel configuration with independent channel characteristics for optimized power management
• TrenchFET technology providing low on-state resistance and high switching efficiency
• Leadless PowerPAIR package design enabling enhanced thermal performance and compact footprint

Applications

• CPU core power delivery systems
• Point-of-load (POL) converters
• Synchronous buck converter topologies
• Computer peripheral power regulation

Procurement Notes

Verify the component against official Vishay datasheet document number 63916 to confirm technical specifications and compliance status. Ensure that the ordering suffix corresponds to the required lead-free and halogen-free material categorization. Cross-reference the manufacturer part number with authorized distribution channels to validate authenticity and traceability before integration into production designs.

Selection Notes

Select this component for applications requiring asymmetric dual-channel performance where one channel demands significantly lower on-resistance than the other. Evaluate thermal constraints carefully, as the junction-to-case resistance differs between channels. Confirm that the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Consider the leadless package requirements during PCB layout to ensure adequate solder interconnection without relying on exposed copper tips.

Part Context

The SiZ920DT belongs to Vishay's TrenchFET family of power MOSFETs, designed for high-efficiency DC-DC conversion. It is specifically engineered for synchronous rectification in low-voltage, high-current applications. The dual-channel architecture allows for space-saving implementations in multi-phase regulators or isolated power supplies where distinct channel characteristics are beneficial.

Replacement Considerations

Consult Vishay documentation for direct pin-compatible alternatives within the SiZ series. Verify that any substitute maintains the 30 V rating and compatible PowerPAIR 6 x 5 package dimensions. Ensure thermal resistance and gate charge parameters meet the original design requirements.